Applications

ELECTRONICS
AND SEMICONDUCTORS

CMP polishing, sapphire, silicon

Nano fractions 50–300 nm for CMP polishing of semiconductor substrates, sapphire, SiC. Ultra-high purity, agglomeration control, low defect count.

Problems and our solutions

Typical problems

  • Defects on substrate surfaces
  • Nanoparticle agglomeration
  • High purity requirements

How we solve it

  • Proven dispersion system
  • Purity for CMP processes
  • Strict D50/D90 control

Technical details: electronics

Processing electronics industry materials (sapphire substrates for LEDs, SiC wafers, Al₂O₃ and AlN ceramics, display glass) requires precision diamond tools and micron powder with nanometer accuracy. The roughness of the processed surface directly affects the electrical characteristics of semiconductor devices, so micron powder purity and consistency are paramount.

Recommended grit sizes

  • W40 – W28 — cutting and surface grinding of sapphire and SiC substrates, chamfering
  • W20 – W10 — fine lapping of wafers, roughness reduction before polishing
  • W7 – W3.5 — chemical-mechanical polishing (CMP), mirror surface Ra < 0.5 nm
  • W2.5 – W0.5 — final super-polishing for optoelectronics and power semiconductors

Purity for electronics

For the electronics industry, metallic impurity content is critical: Fe, Ni, Co can migrate into semiconductor structures and cause current leakage. Our PCD micron powder has total Fe+Ni+Co < 65 ppm, meeting requirements for semiconductor material processing. Every batch passes magnetic inclusion (< 0.1%) and particle size testing. For high-requirement operations, we offer additional purification and certification on request.

Read about Fe, Ni, Co impurity impact on micron powder quality in our dedicated article.

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We will match the grade to your task

Message us on VK/MAX or send an inquiry — we will suggest a specific grit and shape.

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